Defects in HIgh-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices
213,98 €
ON THE CHARACTERIZATION OF ELECTRONICALLY ACTIVE DEFECTS IN HIGH-?. GATE DIELECTRICS. - INELASTIC ELECTRON TUNNELLING SPECTROSCOPY (IETS) STUDY OF HIGH-K DIELECTRICS. - IMPACT OF HIGH-?. PROPERTIES ON MOSFET ELECTRICAL CHARACTERISTICS.
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