Gate Stacks with High-k Dielectrics and Metal Electrodes: Fermi Level Pinning an
49,79 €
This book focuses on the study ofFLP and dipoles induced by capping a thin lanthanideoxide layer on a gate stack with a Hf-based high-kdielectric. By examining Vfb shifts in speciallydesigned gate stacks, it is concluded that thenegative Vfb shift is due to a dipole formation atthe interface between the interfacial SiO2 layer anda lanthanide silicate layer.
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