New NTE2375 N-Ch MOSFET Enhancement Mode 100V 41A 230W High Speed Switch TO247
6,63 €
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Single Pulse Avalanche Energy, EAS:830 mJ
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Configuration:Single
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Avalanche Current, IAR:41 A
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Input Capacitance, Ciss:2800 pF Typ.
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Number of Elements per Chip:1
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MPN:NTE2375
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Peak Diode Recovery dv/dt:5.5 V/ns
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Turn-Off Delay Time, td(off):60 ns Typ.
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Continuous Drain Current:41 A Max @ +25 *C
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Gate Threshold Voltage VGS(th):2 V Min., 4 V Max.
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Pulsed Drain Current:120 A
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Repetitive Avalanche Energy, EAR:19 mJ
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Number of Pins:3
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Maximum Operating Temperature:175 °C (347 °F)
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Mounting Style:Through-Hole
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Drain-to-Source Breakdown Voltage, V(BR)DSS:100 V Min.
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Static Drain-to-Source On-Resistance, RDS(ON):0.055 Ohm
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Fall Time, tf:81 ns Typ.
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Forward Transconductance, gfs:13 mhos Min.
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Package/Case:TO247
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Transistor Category:High Speed Switching
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Minimum Operating Temperature:-55 °C (-67 °F)
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Brand:NTE Electronics, INC.
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Type:N-Channel Enhancement Mode MOSFET
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Gate- to -Source Voltage, VGS:+/- 20 V
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Turn-On Delay Time, td(on):16 ns Typ.
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Maximum Power Dissipation:230 W
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Packaging:Bag
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Rise Time, tr:120 ns Typ.
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Country/Region of Manufacture:United States
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Expedited shipping:Canada Post Tracked Packet - International (Non-US) 11,85 EUR - Lieferung zwischen 27. June 2025 und 03. July 2025 (bei heutigem Zahlungseingang)
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Economy Shipping:Canada Post International Parcel (Non-US) - Surface 25,68 EUR - Lieferung zwischen 31. July 2025 und 24. October 2025 (bei heutigem Zahlungseingang)
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Versand nach:Weltweit
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Versand ausgeschlossen:Bhutan , Nepal , Russische Föderation , Nigeria , Israel , Jemen , Katar , Saudi-Arabien , Marokko , Kuwait , ... und weitere
