Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices: Proceedings of
165,76 €
Ultrathin dielectrics in silicon microelectronics — an overview. - Section 1. - Study of the Si/SiO2interface using positrons: present status and prospects. - Synchrotron and conventional photoemission studies of oxides and N2Ooxynitrides.
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