Epitaxialgraphen auf Siliziumkarbid: Modellierung, Charakterisierung und
131,01 €
It presents the state of the art of the synthesis of EG-SiC and profusely explains it as a function of SiC substrate characteristics such as polytype, polarity, and wafer cut as well as the in situ and ex situ conditioning techniques, including H.
Jetzt bei Ebay:
