Ladungsbasierte Mos-Transistormodellierung: Das EKV-Modell für Low-Power und Rf Ic...
145,96 €
The authors (both of the Swiss Center for Electronic and Microtechnology, Switzerland) of this work summarize and synthesize the current research on the EKV approach to MOS transistor modeling, emphasizing design considerations, including the properties of the device that can be used to build robust new circuits or understand existing circuits.
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